FDV303N Datasheet

The FDV303N is a N-Channel Digital FET.

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Part NumberFDV303N
Manufactureronsemi
Overview These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state r.
* 25 V, 0.68 A Continuous, 2 A Peak
* RDS(ON) = 0.45 Ω @ VGS = 4.5 V
* RDS(ON) = 0.6 Ω @ VGS= 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V
* Gate
*Source Zener for ESD Ruggedness, > 6 kV Human Body Model
* Compact Industry Standard SOT
*23 Sur.
Part NumberFDV303N
DescriptionN-Channel Digital FET
ManufacturerFairchild Semiconductor
Overview These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-stat. 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model Compact industry standard SOT-23 surface mount pa.
Part NumberFDV303N
Description25V N-ChanneI MOSFET
ManufacturerUMW
Overview SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN Drain/Output Cu. VDS(V)=25V ID=0.68A RDS(ON)<28mΩ(VGS=4.5V) RDS(ON)<42mΩ(VGS=2.7V) Compact industry standard SOT-23 surface mount package. Very low level gate drive requirements allowing direct operation in 3V circuits VGS(th) < 1V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model 2.Pinning information .
Part NumberFDV303N
DescriptionN-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) ● RDS(ON) ＜ 600mΩ (VGS = 2.7V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 .
* VDS (V) = 25V
* ID = 0.68 A
* RDS(ON) ＜ 450mΩ (VGS = 4.5V)
* RDS(ON) ＜ 600mΩ (VGS = 2.7V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.10.38 -0.1 GS
* Abso.