Datasheet Details
| Part number | FDV303N |
|---|---|
| Manufacturer | UMW |
| File Size | 720.19 KB |
| Description | 25V N-ChanneI MOSFET |
| Download | FDV303N Download (PDF) |
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Overview: UMW FDV303N 25V N-ChanneI MOSFET 1.
| Part number | FDV303N |
|---|---|
| Manufacturer | UMW |
| File Size | 720.19 KB |
| Description | 25V N-ChanneI MOSFET |
| Download | FDV303N Download (PDF) |
|
|
|
SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Symbol VDSS VGSS ID PD TJ, TSTG ESD RθJA D G S Value 25 8 0.68 2 0.35 -55 to 150 Units V A A W °C 6 kV 357 °C/W UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 8 www.umw-ic.com UMW FDV303N 25V N-ChanneI MOSFET 4.Electrical Characteristics (TA=25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units OFF CHARACTERISTICS V Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 25 Breakdown Voltage Temp.
Coefficient ID=250µA ΔBVDSS/ΔTJ Referenced to 25°C 26 mV/°C µA Zero Gate Voltage Drain Current VDS=20V, VGS=0V IDSS TJ=55°C 1 µA 10 nA Gate - Body Leakage IGSS VGS=8V, VDS=0V ±100 ON CHARACTERISTICS (Note) Gate Threshold Voltage Gate Threshold Voltage Temp.
Coefficient VGS(th) VDS=VGS, ID=250µA ΔVGS(th)/TJ ID=250µA Referenced to 25°C 0.65 0.8 1 V -2.6 mV/°C Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance RDS(ON) ID(ON) gFS VGS=4.5, ID=0.5A VGS=2.7V, ID=0.2A VGS=2.7V, VDS=5V VDS=5V, ID=0.5A 450 mΩ 600 0.5 A 1.45 S DYNAMIC CHARACTERISTICS Input Capacitance Ciss 50 pF Output Capacitance Coss VGS=0V, VDS=10V, f=1MHz 28 pF Reverse Transfer Capacitance Crss 9
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