FDV303N Overview
UMW FDV303N 25V N-ChanneI MOSFET 4. (TA=25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units OFF CHARACTERISTICS V Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 25 Breakdown Voltage Temp. UMW FDV303N 25V N-ChanneI MOSFET Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg VDS=5V, ID=0.5A Qgs VGS=4.5V Qgd Drain Source Diode Characteristics and Maximum Ratings Maximum Continuous...
FDV303N Key Features
- Continuous
- Pulsed Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Hum
- 55 to 150
- Body Leakage
- On Delay Time
- On Rise Time
- Off Delay Time Turn
- Off Fall Time
