FDV303N Datasheet N-channel Digital Fet

Manufacturer: onsemi

Overview: DATA SHEET .onsemi. Digital FET, N-Channel FDV303N General.

Datasheet Details

These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on−state resistance at low gate drive conditions.

This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells.

25 V, 0.68 A Continuous, 2 A Peak.
RDS(ON) = 0.45 Ω @ VGS = 4.5 V.
RDS(ON) = 0.6 Ω @ VGS= 2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V.
Gate.
Source Zener for ESD Ruggedness, > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant SOT.
23 (TO.
236.

Brand Logo	Part Number	Description	Other Manufacturers
	FDV303N	N-Channel Digital FET	Fairchild Semiconductor
	FDV303N	N-Channel MOSFET	Kexin
UMW	FDV303N	25V N-ChanneI MOSFET	UMW