FDV303N Description
These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells.
FDV303N Key Features
- 25 V, 0.68 A Continuous, 2 A Peak
- RDS(ON) = 0.45 Ω @ VGS = 4.5 V
- RDS(ON) = 0.6 Ω @ VGS= 2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation
- Gate-Source Zener for ESD Ruggedness, > 6 kV Human Body
- pact Industry Standard SOT-23 Surface Mount Package
- This Device is Pb-Free, Halogen Free/BFR Free and is RoHS
- Location code can be blank or with characters indicating manufacturing location
- Date Code orientation and overbar may vary depending upon manufacturing location
- Rev. 6