FDV303N
Description
These N- Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on- state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high- efficiency miniature discrete DC/DC conversion in pact portable electronic devices like cellular phones and pagers. This device has excellent on- state resistance even at gate drive voltages as low as 2.5 V.
Features
- 25 V, 0.68 A Continuous, 2 A Peak
- RDS(ON) = 0.45 Ω @ VGS = 4.5 V
- RDS(ON) = 0.6 Ω @ VGS= 2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V
- Gate- Source Zener for ESD Ruggedness, > 6 k V Human Body
Model
- pact Industry Standard SOT- 23 Surface Mount Package
- This Device is Pb- Free, Halogen Free/BFR...
