FDV303N - N-Channel Digital FET

Product Overview

ON Semiconductor

Part number	FDV303N
Manufacturer	ON Semiconductor
File Size	261.90 KB
Description	N-Channel Digital FET
Datasheet	FDV303N Datasheet
Additional preview pages of the FDV303N datasheet.

These N

produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.

state resistance at low gate drive conditions.

25 V, 0.68 A Continuous, 2 A Peak.
RDS(ON) = 0.45 Ω @ VGS = 4.5 V.
RDS(ON) = 0.6 Ω @ VGS= 2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V.
Gate.
Source Zener for ESD Ruggedness, > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant www. onsemi. com SOT.
23.

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Mar 23, 2020 |