Datasheet Details
| Part number | FDV303N |
|---|---|
| Manufacturer | onsemi |
| File Size | 195.00 KB |
| Description | N-Channel Digital FET |
| Datasheet |
 FDV303N Datasheet
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General Description
These N
produced using onsemi’s proprietary, high cell density, DMOS technology.
state resistance at low gate drive conditions.
Key Features
- 25 V, 0.68 A Continuous, 2 A Peak.
- RDS(ON) = 0.45 Ω @ VGS = 4.5 V.
- RDS(ON) = 0.6 Ω @ VGS= 2.7 V.
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V.
- Gate.
- Source Zener for ESD Ruggedness, > 6 kV Human Body Model.
- Compact Industry Standard SOT.
- 23 Surface Mount Package.
- This Device is Pb.
- Free, Halogen Free/BFR Free and is RoHS Compliant SOT.
- 23 (TO.
- 236.