Datasheet Details
| Part number | FDV304P |
|---|---|
| Manufacturer | onsemi |
| File Size | 176.80 KB |
| Description | P-Channel Digital FET |
| Datasheet |
 FDV304P Datasheet
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General Description
This P
produced using onsemi’s proprietary, high cell density, DMOS technology.
state resistance at low gate drive conditions.
Key Features
- 25 V,.
- 0.46 A Continuous,.
- 1.5 A Peak.
- RDS(on) = 1.1 W @ VGS =.
- 4.5 V.
- RDS(on) = 1.5 W @ VGS =.
- 2.7 V.
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
- Gate.
- Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
- Compact Industry Standard SOT.
- 23 Surface Mount Package.
- This Device is Pb.
- Free and Halide Free.