FDV304P - P-Channel Digital FET

Product Overview

ON Semiconductor

Part number	FDV304P
Manufacturer	ON Semiconductor
File Size	176.80 KB
Description	P-Channel Digital FET
Datasheet	FDV304P Datasheet
Additional preview pages of the FDV304P datasheet.

This P

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance at low gate drive conditions.

25 V,.
0.46 A Continuous,.
1.5 A Peak.
RDS(on) = 1.1 W @ VGS =.
4.5 V.
RDS(on) = 1.5 W @ VGS =.
2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free and Halide Free.

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Published: Jan 23, 2023 |