FDV301N
Description
This N- Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N- channel FET can replace several different digital transistors, with different bias resistor values.
Features
- 25 V, 0.22 A Continuous, 0.5 A Peak
- RDS(on) = 5 W @ VGS = 2.7 V
- RDS(on) = 4 W @ VGS = 4.5 V
- Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. VGS(th) < 1.06 V
- Replace Multiple NPN Digital Transistors with One DMOS FET
- This Device is Pb- Free and Halide Free
Vcc
Figure 1. Inverter Application
DATA SHEET .onsemi.
SOT- 23 CASE 318- 08
MARKING DIAGRAM
&E&Y 301&E&G
&E
= Designates Space
&Y
= Binary Calendar...
