Datasheet Details
| Part number | FDV301N |
|---|---|
| Manufacturer | onsemi |
| File Size | 199.06 KB |
| Description | N-Channel Digital FET |
| Datasheet |
 FDV301N Datasheet
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General Description
This N
transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
state resistance.
Key Features
- 25 V, 0.22 A Continuous, 0.5 A Peak.
- RDS(on) = 5 W @ VGS = 2.7 V.
- RDS(on) = 4 W @ VGS = 4.5 V.
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V.
- Replace Multiple NPN Digital Transistors with One DMOS FET.
- This Device is Pb.
- Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter.