FDV301N - N-Channel Digital FET

Product Overview

ON Semiconductor

Part number	FDV301N
Manufacturer	ON Semiconductor
File Size	199.06 KB
Description	N-Channel Digital FET
Datasheet	FDV301N Datasheet
Additional preview pages of the FDV301N datasheet.

This N

transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

25 V, 0.22 A Continuous, 0.5 A Peak.
RDS(on) = 5 W @ VGS = 2.7 V.
RDS(on) = 4 W @ VGS = 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V.
Replace Multiple NPN Digital Transistors with One DMOS FET.
This Device is Pb.
Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter.

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Published: Jul 6, 2019 |