Part Number	FGD3N60LSD
Manufacturer	onsemi
Overview	ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature. C G E . * High Current Capability * Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A * High Input Impedance Applications * HID Lamp Applications * Piezo Fuel Injection Applications C Description ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The de.