FGD3N60LSD Datasheet | Fairchild Semiconductor

Features - High Current Capability - Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A - High Input Impedance tm Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature . Applications - HID Lamp Applications - Piezo Fuel Injection Applications D-PAK Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Derating Factor Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C (1) 600 ± 25 6 3 25 3 25 40 0.32 -55 to +150 -55 to +150 250 Units V V A A A A A W W/°C °C °C °C Thermal Characteristics Symbol RθJC (IGBT) RθJA Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. --- Max. 3.1 100 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation .fairchildsemi. FGD3N60LSD Rev. B FGD3N60LSD...