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FGD3N60LSD - IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses.

The device is designed for applications where very low On-Voltage Drop is a required feature.

HID Lamp Applications Piezo Fuel Injection Applications C C G G E D-PAK E Ab

Key Features

  • High Current Capability.
  • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A.
  • High Input Impedance tm.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGD3N60LSD IGBT September 2006 FGD3N60LSD IGBT Features • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance tm Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Applications • HID Lamp Applications • Piezo Fuel Injection Applications C C G G E D-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max.