FGD3N60LSD Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required.
FGD3N60LSD Key Features
- High Current Capability
- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
- High Input Impedance