FGD3N60LSD
FGD3N60LSD is IGBT manufactured by onsemi.
Features
- High Current Capability
- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
- High Input Impedance
Applications
- HID Lamp Applications
- Piezo Fuel Injection Applications
Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature
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G E D-PAK
Absolute Maximum Ratings
Symbol
Description
VCES VGES IC
ICM (1) IF I FM
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current
@ TC = 25°C @ TC = 100°C
(1)
@ TC = 100°C
Maximum Power Dissipation
Derating Factor
@ TC = 25°C
Operating Junction Temperature
Tstg
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
600 ± 25
6 3 25 3 25 40 0.32 -55 to +150 -55 to +150 250
Symbol
Parameter...
