Datasheet Details
| Part number | FGD3N60LSD |
|---|---|
| Manufacturer | onsemi |
| File Size | 858.79 KB |
| Description | IGBT |
| Datasheet |
 FGD3N60LSD Datasheet
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General Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses.
The device is designed for applica-tions where very low On-Voltage Drop is a required feature.
Key Features
- High Current Capability.
- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A.
- High Input Impedance.