FJA4310 Datasheet and Specifications PDF

The FJA4310 is a NPN Epitaxial Silicon Transistor.

Key Specifications

Mount TypeThrough Hole
Pins3
Max Frequency30 MHz
Height23.8 mm
Length15.8 mm
Width5 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberFJA4310 Datasheet
ManufacturerFairchild Semiconductor
Overview FJA4310 — NPN Epitaxial Silicon Transistor FJA4310 NPN Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJ. ter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC=5mA, IE=0 IC=50mA, RBE=
* IE=5mA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=4V, IC=3A IC=5A, IB=0.5A VCB=10V, f=1MHz VCE=5V, IC=1A hFE Classification Classification hFE .
Part NumberFJA4310 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 3A ·Complement to Type FJA4210 ·Minimum Lot-to-Lot variations for robust device performance and reliab. kdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB Collecto.

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