Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
DC Current Gain-
: hFE= 50(Min)@ IC= 3A
Complement to Type FJA4210
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed for audio and general purpose applications.
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·DC Current Gain-
: hFE= 50(Min)@ IC= 3A ·Complement to Type FJA4210 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1.5
A
100
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
FJA4310
isc website：www.iscsemi.
FJA4310 Datasheet
