FJA4313 Description
·High Collector Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 230 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;.
FJA4313 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| FJA4313 | NPN Epitaxial Silicon Transistor |
·High Collector Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 230 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;.