FJA4313 Datasheet and Specifications PDF

The FJA4313 is a NPN Epitaxial Silicon Transistor.

Key Specifications

Mount TypeThrough Hole
Pins3
Height23.8 mm
Max Operating Temp150 °C
Min Operating Temp-50 °C
Part NumberFJA4313 Datasheet
ManufacturerFairchild Semiconductor
Overview 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A • High Power Dissipa.
* High Current Capability: IC = 17A
* High Power Dissipation : 130watts
* High Frequency : 30MHz.
* High Voltage : VCEO=250V
* Wide S.O.A for reliable operation.
* Excellent Gain Linearity for low THD.
* Complement to 2SA1962/FJA4213.
* Thermal and electrical Spice models are available
* Same transi.
Part NumberFJA4313 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type FJA4213 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. tor-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 230 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 230 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 3.0 V VBE(on) Base-Emitter On Voltage IC= 7A .

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