FJB102 Datasheet and Specifications PDF

The FJB102 is a High Voltage Power Darlington Transistor.

Key Specifications

PackageD2PAK
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-65 °C
🏠
Part NumberFJB102 Datasheet
ManufacturerFairchild Semiconductor
Overview FJB102 — NPN High-Voltage Power Darlington Transistor December 2014 FJB102 NPN High-Voltage Power Darlington Transistor Features • High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum) .
* High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum)
* Low Collector-Emitter Saturation Voltage Equivalent Circuit C B 1 D2-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJB102TM Top Mark FJB102 R1 3 ≅ LΩ 3 ≅ LΩ R2 E Package TO-263 2L (D2PAK) Packi.
Part NumberFJB102 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. lector-Emitter Sustaining Voltage IC= 30mA, IB= 0 MIN TYP MAX UNIT 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.0A; IB= 6mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA 2.5 V VBE(on) ICBO Base-Emitter On Voltage Collector Cutoff Current IC= 8A;.

Price & Availability

Seller Inventory Price Breaks Buy
Avnet 1 1600+ : 0.47054 USD
3200+ : 0.45816 USD
6400+ : 0.45221 USD
12800+ : 0.44641 USD		 View Offer
Newark 802 1+ : 1.93 USD
10+ : 1.29 USD
25+ : 1.17 USD
50+ : 1.05 USD		 View Offer
Newark 0 800+ : 0.783 USD
3000+ : 0.759 USD
6000+ : 0.707 USD
12000+ : 0.655 USD		 View Offer