| Part Number | FQD3P50 |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* *2.1 A, *500 V, RDS(on) = 4.9 W (Max.) @ VGS = *10 V, ID = *1.05 A * Low Gate Charge (Typ. 18 nC) * Low Crss (Typ. 9.5 pF) * 100% Avalanche Tested * These Devices are Pb *Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 20°C unless otherwise noted) Symbol Parameter Value Unit VDSS D. |
FQD3P50 Datasheet
The FQD3P50 is a P-Channel MOSFET.
| Part Number | FQD3P50 |
|---|---|
| Description | 500V P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V * Low gate charge ( typical 18 nC) * Low Crss ( typical 9.5 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS Compliant I-PAK FQU Series G! S ! * * ▶▲ * ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol. |