| Part Number | FQP3N60C Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A * Low Gate Charge (Typ. 10.5 nC) * Low Crss (Typ. 5.0 pF) * 100% Avalanche Tested * This is a Pb *Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain *Source Voltage 600 . |
FQP3N60C Datasheet PDF
The FQP3N60C is a N-Channel MOSFET.
| Part Number | FQP3N60C Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.5 A * Low Gate Charge (Typ. 10.5 nC) * Low Crss (Typ. 5.0 pF) * 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current . |