| Part Number | FQPF12N60 Datasheet |
|---|---|
| Manufacturer | Oucan Semi |
| Overview | Product Summary The FQP12N60 & FQPF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC app. 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-t. |
FQPF12N60 Datasheet and Specifications PDF
The FQPF12N60 is a 12A N-Channel MOSFET.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 19.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FQPF12N60 Datasheet |
|---|---|
| Description | 600V N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* * * * * * 5.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD . |