| Part Number | FQU2N60C |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* * * * * * 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! * ◀ ▲ * * G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VG. |
FQU2N60C Datasheet
The FQU2N60C is a 600V N-Channel MOSFET.
| Part Number | FQU2N60C |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
MOSFET – N-Channel, QFET)
600 V, 1.9 A, 4,7 W
FQD2N60C / FQU2N60C
This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced .
* 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A * Low Gate Charge (Typ. 8.5 nC) * Low Crss (Typ. 4.3 pF) * 100% Avalanche Tested * These Devices are Halid Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Value Unit VDSS Drain *Source V. |