| Part Number | HGT1S12N60C3DS Datasheet |
|---|---|
| Manufacturer | Intersil |
| Overview | HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching device. of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a. |
HGT1S12N60C3DS Datasheet and Specifications PDF
The HGT1S12N60C3DS is a N-Channel IGBT.
| Part Number | HGT1S12N60C3DS Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | Fairchild Semiconductor |
| Overview | HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best. of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a. |