HGT1S12N60C3S
Description
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- 24A, 600V at TC = 25oC
- 600V Switching SOA Capability
- Short Circuit Rating
- Low Conduction Loss
