| Part Number | HGTG20N60A4 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT is ideal for many high voltage switching applicatio. |
HGTG20N60A4 Datasheet
The HGTG20N60A4 is a N-Channel IGBT.
| Part Number | HGTG20N60A4 |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | Intersil |
| Overview | HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 4781.1 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best f. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application. |
| Part Number | HGTG20N60A4 |
|---|---|
| Description | IGBT |
| Manufacturer | onsemi |
| Overview |
The HGTG20N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applicat.
of high input
impedance of a MOSFET and the low on *state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, s. |