| Part Number | HGTG20N60A4D |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | Data Sheet HGTG20N60A4D February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of. of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in . |
HGTG20N60A4D Datasheet
The HGTG20N60A4D is a N-Channel IGBT.
| Part Number | HGTG20N60A4D |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | onsemi |
| Overview |
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG20N60A4D
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transi.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on *state conduction loss of a bipolar transistor. The much lower on *state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in . |