| Part Number | IPA037N08N3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤3.7mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to.
*Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |
IPA037N08N3 Datasheet
The IPA037N08N3 is a N-Channel MOSFET.
| Part Number | IPA037N08N3 |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-re.
* Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance RDS(on) * N-channel, normal level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for t. |