IPA045N10N3 Datasheet
IPA045N10N3 Datasheet (Infineon)
Infineon
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*N-channel,normallevel
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowon-resistanceRDS(on)
*175°Coperatingtemperature
*Pb-freeleadplating;RoHScompliant
*QualifiedaccordingtoJEDEC1)fortargetapplication
*Idealforhigh-frequencyswitchingandsynchronousrectification.
IPA045N10N3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t.
*Low drain-source on-resistance:
RDS(on) ≤ 4.5mΩ (max)
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.