IPA057N08N3 Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 5.7mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t.

*Low drain-source on-resistance: RDS(on) ≤ 5.7mΩ (max)
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA057N08N3G DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOS(TM)3 .

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC1) for target applications
* Halogen-fre.