The IPB038N12N3G is a Power-Transistor.
| Package | TO-263 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPB038N12N3G Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-26.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID * 175 °C operating temperature * Pb-free lead plating; RoHS compliant, halogen free * Qualified according to JEDEC1) for target application * I. |
| Part Number | IPB038N12N3G Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
IPB038N12N3G
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variat.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 2000 | 1000+ : 1.7514 USD 2000+ : 1.7073 USD 4000+ : 1.6632 USD 8000+ : 1.6191 USD |
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| Newark | 1063 | 1+ : 5.27 USD 10+ : 3.51 USD 25+ : 3.29 USD 50+ : 3.06 USD |
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| Newark | 0 | 1000+ : 2.87 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| IPB038N12N3 | Infineon | Power Transistor |