IPB50R299CP Datasheet
IPB50R299CP Datasheet (Infineon)
Infineon
IPB50R299CP CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant •.
* Lowest figure of merit RON x Qg
* Ultra low gate charge
* Extreme dv/dt rated
* High peak current capability
* Pb-free lead plating; RoHS compliant
* Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.299 23 V Ω nC
PG-TO263
CoolMOS CP i.
IPB50R299CP Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-.
*With TO-263( D²PAK ) packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM .