IPD033N06N Datasheet and Specifications PDF

The IPD033N06N is a N-Channel MOSFET.

Key Specifications

Max Operating Temp175 °C
Min Operating Temp-55 °C
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Part NumberIPD033N06N Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤3.3mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Optimized for synchronous rectification
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr.
Part NumberIPD033N06N Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Optimizedforsynchronousrectification
*100%avalanchetested
*Superiorthermalresistance
*N-channel,normallevel
*QualifiedaccordingtoJEDEC1)fortargetapplications
*Pb-freeleadplating;RoHScompliant
*Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameter.

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10+ : 1.73 USD
100+ : 1.1877 USD
500+ : 0.961 USD		 View Offer