The IPD036N04L is a Power-Transistor.
| Max Operating Temp | 175 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | IPD036N04L Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
Type
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level.
* Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Qualified according to JEDEC1) for target applications * N-channel, logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 100% Avalanche tested * Pb-free plating; RoHS compliant . |
| Part Number | IPD036N04L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤3.6mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 1416 | 5+ : 1.75 USD 10+ : 1.11 USD 25+ : 0.989 USD 50+ : 0.866 USD |
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| Newark | 0 | 2500+ : 0.613 USD 5000+ : 0.597 USD 10000+ : 0.595 USD |
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| Future Electronics | 2500 | 2500+ : 0.895 USD 5000+ : 0.885 USD 7500+ : 0.87 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD036N04LG | Infineon | Power-Transistor |