IPD050N10N5 Datasheet and Specifications PDF

The IPD050N10N5 is a MOSFET.

Key Specifications

PackageDPAK
Height2.5 mm
Max Operating Temp175 °C
Min Operating Temp-55 °C
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Part NumberIPD050N10N5 Datasheet
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*N-channel,normallevel
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowon-resistanceRDS(on)
*175°Coperatingtemperature
*Pb-freeleadplating;RoHScompliant
*QualifiedaccordingtoJEDEC1)fortargetapplication
*Idealforhigh-frequencyswitchingandsynchronousrectification.
Part NumberIPD050N10N5 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .
*Static drain-source on-resistance: RDS(on)≤5mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High frequency switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltag.

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