The IPD053N08N3 is a Power-Transistor.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD053N08N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPD053N08N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
80 .
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 V 5.3 mW 90 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application previous . |
| Part Number | IPD053N08N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤5.3mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 5000 | 2500+ : 0.91476 USD 5000+ : 0.89173 USD 10000+ : 0.86869 USD 20000+ : 0.84566 USD |
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| Newark | 15523 | 1+ : 2.47 USD 10+ : 1.76 USD 100+ : 1.35 USD 500+ : 1.19 USD |
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| Future Electronics | 2500 | 2500+ : 2.13 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD053N08N3G | Infineon | Power-Transistor |