The IPD088N06N3 is a N-Channel MOSFET.
| Max Operating Temp | 175 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | IPD088N06N3 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤8.8mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt. |
| Part Number | IPD088N06N3 Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD088N06N3G | Infineon | Power-Transistor |
| IPD088N06N3G | Inchange Semiconductor | N-Channel MOSFET |