The IPD180N10N3 is a Power-Transistor.
| Package | DPAK |
|---|---|
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD180N10N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max TO-263.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max TO-263 ID * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Ideal for high-fr. |
| Part Number | IPD180N10N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤18mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volta. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Future Electronics | 2500 | 2500+ : 0.895 USD 5000+ : 0.88 USD 7500+ : 0.87 USD |
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| Future Electronics | 0 | 2500+ : 0.895 USD 5000+ : 0.88 USD 7500+ : 0.87 USD |
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| Chip One Stop | 1893 | 1+ : 0.39 USD 10+ : 180 JPY 50+ : 153 JPY 250000000+ : 65.1 JPY |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD180N10N3G | Infineon | Power-Transistor |