The IPD33CN10N is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD33CN10N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IPD33CN10N,IIPD33CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤34mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .
*Static drain-source on-resistance: RDS(on)≤34mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Ideal for high-frequency switching and synchronous rectification *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA. |
| Part Number | IPD33CN10N Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO252) ID 100 V 34 mΩ 27 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD33CN10NG | Infineon | Power-Transistor |