IPD50R1K4CE Datasheet and Specifications PDF

The IPD50R1K4CE is a N-Channel MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Height2.41 mm
Length6.73 mm
Width6.22 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIPD50R1K4CE Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤1.4Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 V.
Part NumberIPD50R1K4CE Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview IPD50R1K4CE,IPU50R1K4CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pio.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS.

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