The IPD600N25N3 is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD600N25N3 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤60mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volta. |
| Part Number | IPD600N25N3 Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
IPD600N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• .
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen-free according t. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 72500 | 2500+ : 1.29668 USD 5000+ : 1.24616 USD 10000+ : 1.19564 USD 20000+ : 1.14512 USD |
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| Avnet | 3 | 1+ : 3.42 USD 10+ : 2.24 USD 100+ : 1.56 USD 500+ : 1.33 USD |
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| Newark | 3 | 1+ : 3.42 USD 10+ : 2.22 USD 100+ : 1.55 USD 500+ : 1.33 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD600N25N3G | Infineon | Power Transistor |