The IPD60R360P7 is a 600V MOSFET.
| Package | TO-252-3 |
|---|---|
| Height | 12.88 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -40 °C |
| Part Number | IPD60R360P7 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A. |
| Part Number | IPD60R360P7 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤0.36Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Suitable for hard and soft switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 2495 | 1+ : 1.29 USD 10+ : 0.809 USD 25+ : 0.717 USD 50+ : 0.625 USD |
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| Chip One Stop | 4387 | 5+ : 1.24 USD 10+ : 0.783 USD 50+ : 0.666 USD 100+ : 0.516 USD |
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| DigiKey | 1949 | 1+ : 1.29 USD 10+ : 0.814 USD 100+ : 0.5373 USD 500+ : 0.41864 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD60R360P7S | Inchange Semiconductor | N-Channel MOSFET |
| IPD60R360P7S | Infineon | MOSFET |