IPD60R650CE Datasheet and Specifications PDF

Package	TO-252-3
Mount Type	Surface Mount
Height	2.56 mm
Max Operating Temp	150 °C
Min Operating Temp	-40 °C

Package

TO-252-3

Mount Type

Surface Mount

Height

2.56 mm

Max Operating Temp

150 °C

Min Operating Temp

-40 °C

Part Number	IPD60R650CE Datasheet
Manufacturer	Inchange Semiconductor
Overview	isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.65Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus. Static drain-source on-resistance: RDS(on)≤0.65Ω Enhancement mode: 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 .

Part Number

IPD60R650CE Datasheet

Description

MOSFET

Manufacturer

Infineon

Overview

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswi.

Price & Availability

Seller	Inventory	Price Breaks	Buy
Newark	4180	5+ : 1.17 USD 10+ : 0.876 USD 25+ : 0.792 USD 50+ : 0.709 USD	View Offer
Newark	0	2500+ : 0.485 USD 5000+ : 0.476 USD 10000+ : 0.468 USD 15000+ : 0.46 USD	View Offer
Rochester Electronics	23328	100+ : 0.3606 USD 500+ : 0.3245 USD 1000+ : 0.2993 USD 10000+ : 0.2668 USD	View Offer