The IPD65R250E6 is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD65R250E6 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤0.25Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Very high commutation ruggedness *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Sou. |
| Part Number | IPD65R250E6 Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™E6seriescombinesthe ex.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *Pb-freeplating,Halogenfreemoldcompound *QualifiedforindustrialgradeapplicationsaccordingtoJEDE. |
| Seller | Inventory | Price Breaks | Buy |
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