IPD65R650CE Datasheet and Specifications PDF

The IPD65R650CE is a MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Max Operating Temp150 °C
Min Operating Temp-40 °C
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Part NumberIPD65R650CE Datasheet
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS.
Part NumberIPD65R650CE Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.65Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤0.65Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*Very high commutation ruggedness
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

Price & Availability

Seller Inventory Price Breaks Buy
Newark 2582 1+ : 1.52 USD
10+ : 1.01 USD
25+ : 0.916 USD
50+ : 0.817 USD		 View Offer
Chip One Stop 647 5+ : 1.37 USD
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50+ : 0.603 USD
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Rochester Electronics 2500 100+ : 0.4284 USD
500+ : 0.3856 USD
1000+ : 0.3556 USD
10000+ : 0.317 USD		 View Offer