The IPD65R660CFD is a Power Transistor.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -40 °C |
| Part Number | IPD65R660CFD Datasheet |
|---|---|
| Manufacturer | Infineon |
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| Part Number | IPD65R660CFD Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IPD65R660CFD,IIPD65R660CFD
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.66Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro.
*Static drain-source on-resistance: RDS(on)≤0.66Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High commutation ruggedness *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD65R660CFDA | Infineon | MOSFET |