The IPP05CN10N is a Power-Transistor.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPP05CN10N Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPB05CN10N G IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summar.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target applicat. |
| Part Number | IPP05CN10N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IPP05CN10N，IIPP05CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot.
*Static drain-source on-resistance: RDS(on) ≤5.1mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
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| Farnell | 0 | 1+ : 2.89 GBP 25+ : 2.63 GBP 100+ : 2.38 GBP 250+ : 1.93 GBP |
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| Mouser | 587 | 1+ : 4.54 USD 10+ : 3.04 USD 50+ : 3.04 USD 100+ : 2.34 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPP05CN10NG | Infineon | Power-Transistor |