IPP50R399CP Datasheet and Specifications PDF

The IPP50R399CP is a N-Channel MOSFET.

Key Specifications

PackageTO-220
Mount TypeThrough Hole
Pins3
Height15.95 mm
Length10.36 mm
Width4.57 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberIPP50R399CP Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPP50R399CP,IIPP50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.399Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-.
*Static drain-source on-resistance: RDS(on) ≤0.399Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
Part NumberIPP50R399CP Datasheet
DescriptionPower Transistor
ManufacturerInfineon
Overview CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied ac.
* Lowest figure-of-merit RON x Qg
* Ultra low gate charge
* Extreme dv/dt rated
* High peak current capability
* Pb-free lead plating; RoHS compliant
* Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R399CP 560 V 0.399 Ω 17 nC PG-TO220 .

Price & Availability

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