| Part Number | IRF2903Z |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of th. l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 30V RDS(on) = 2.4mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processi. |
IRF2903Z Datasheet
The IRF2903Z is a HEXFET Power MOSFET.
| Part Number | IRF2903Z |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF2903Z，IIRF2903Z
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤2.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Mi.
*Low drain-source on-resistance: RDS(on) ≤2.4mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃. |