IRF3703 Datasheet and Specifications PDF

PD - 93918 SMPS MOSFET IRF3703 HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Full.

er Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30
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* Static Drain-to-Source On-Resistance
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* Gate Threshold Voltage 2.0
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* Drain-to-Source Leakage Current
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* Gate-to-Source Forward Leakage
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* Gate-to-Source Reve.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3703，IIRF3703 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Mini.

*Low drain-source on-resistance: RDS(on) ≤2.8mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃.