IRF421 Datasheet and Specifications PDF

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo.

* 2.2A and 2.5A, 450V and 500V
* rDS(ON) = 3.0Ω and 4.0Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” .

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·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay a.

OL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS=0 VS.

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid.

e, refer to Section 7. ID at Tc=100
* 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source.