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IRF421 - N-Channel Power MOSFETs

Download the IRF421 datasheet PDF. This datasheet also covers the IRF420 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

2.2A and 2.5A, 450V and 500V rDS(ON)= 3-Ofi and 4.0Q SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device These are N-Channel enhancement mode

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF420-NJS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF421
Manufacturer NJS
File Size 136.58 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF421 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
^E.mL-don.du.cio'i Lpioducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE; (973) 376-2922 (212) 227-6005 IRF420, IRF421, FAX: (973) 376-8960 IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Features Description • 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.