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IRF421 Datasheet N-channel Power MOSFETs

Manufacturer: NJS

Overview: ^E.mL-don.du.cio'i Lpioducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE; (973) 376-2922 (212) 227-6005 IRF420, IRF421, FAX: (973) 376-8960 IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

• 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

IRF421 Distributor