Datasheet4U Logo Datasheet4U.com

IRF421 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: Semiconductor IRF420, IRF421, IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 2.2A and 2.5A, 450V and 500V.
  • rDS(ON) = 3.0Ω and 4.0Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF420 IRF421 IRF422 IRF423.

IRF421 Distributor