IRF422 Datasheet | Intersil

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. July 1998 Features - 2.2A and 2.5A, 450V and 500V - r DS(ON) = 3.0Ω and 4.0Ω - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Ordering Information PART NUMBER IRF420 IRF421 IRF422 IRF423 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF420 IRF421 IRF422 IRF423 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 5-1 IRF420, IRF421, IRF422, IRF423 Absolute Maximum Ratings TC = 25o C Unless Otherwise Specified IRF420 500 500 2.5 1.6 10 ±20 50 0.4 210 -55 to 150 300 260 IRF421 450 450 2.5 1.6 10 ±20 50 0.4 210 -55 to 150 300 260 IRF422 500 500 2.2 1.4 8 ±20 50 0.4 210 -55 to 150 300 260 IRF423 450 450 2.2 1.4 8 ±20 50 0.4 210 -55 to 150 300 260 UNITS V V A A A V W W/o C m J o C o C o C Drain to Source Breakdown Voltage (Note 1)- . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - . . VDGR Continuous Drain Current- - - - - . ID TC = 100o C - - - - -...