IRF422
IRF422 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- silicon Gate for fast switching at elevate
- rugged
- low drive requirements
- ease of paralleling
APPLICATIONS
- high speed applications such as
Switching power supplies,AC and DCmotor controls relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
500 ±20
Drain Current-continuous@ TC=25℃ 2.2 A
Total Dissipation@TC=25℃
50 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25m A
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1.4A
IGSS Gate Source Leakage...
