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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF423
DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling
APPLICATIONS ·high speed applications such as
Switching power supplies,AC and DCmotor controls relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
450 ±20
V V
Drain Current-continuous@ TC=25℃ 2.2 A
Total Dissipation@TC=25℃
50 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.
IRF423 Datasheet
